PART |
Description |
Maker |
5SHX26L4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 1590 A, 4500 V, SCR
|
The ABB Group ABB, Ltd.
|
IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五(DRM)的|00VAR120
|
Mitsubishi Electric, Corp.
|
IKW40N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|
5SHZ08F6000 |
Reverse Blocking Integrated Gate-Commutated Thyristor
|
The ABB Group
|
ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ... Reverse Path Amplifiers Reverse Amplifier with Step Attenuator
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|